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The FQPF14N30 is a 300 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching applications such as DC‑DC converters and switch‑mode power supplies, offering low on‑resistance and fast switching performance.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and mechanical dimensions for the TO‑220F package, along with safety and trademark notices.
| Drain‑Source Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 8.5 A |
| Pulsed Drain Current (ID) (Note 1) | 34 A |
| Gate‑Source Voltage (VGS) Rating | ±30 V |
| On‑Resistance (RDS(on)) | 0.299 Ω @ VGS=10 V |
| Typical Gate Charge (Qg) | 30 nC |
| Power Dissipation (PD) at 25 °C | 50 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.5 °C·W |
| Operating Temperature Range | -55 °C to +150 °C |
The device can conduct a continuous drain current of 8.5 A at 25 °C.
A pulsed drain current of up to 34 A is allowed (see Note 1).
The typical on‑resistance is 0.299 Ω when VGS = 10 V.