Key facts
- Brand
- Cypress
- Model
- CY7C1041
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-06
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Cypress CY7C1041 256K x 16 Static RAM Datasheet
The document describes the CY7C1041, a high-performance GMOS static RAM organized as 262,144 words by 16 bits. It features automatic power-down when deselected, TTL-compatible inputs and outputs, and low CMOS standby power in the L version.
Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Reading is performed by taking CE and Output Enable (OE) LOW while forcing WE HIGH. The device is available in standard 44-pin SOJ and TSOP II packages.
Cypress CY7C1041 specifications
| Organization | 262,144 words x 16 bits |
|---|---|
| Maximum Access Time (fastest) | 12 ns |
| Low active power (max.) | 1430 mW |
| Low CMOS standby power (L version) | 2.75 mW |
| Data Retention Voltage | 2.0V |
All Cypress CY7C1041 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum access time for the CY7C1041-12?
The maximum access time for the CY7C1041-12 is 12 ns.
How do you write data to the device?
Writing is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW.
What is the access time of the CY7C1041?
The device has a typical access time of 15 ns.
Which packages are available for the CY7C1041?
It is offered in a 44‑lead 400‑mil SOJ package and a 44‑lead TSOP Type II package.