The CY7C1041 is a high-performance CMOS static RAM with high speed, low power consumption, 2.0V data retention and other features.
The CY7C1041 is a high‑performance GMOS static RAM organized as 262,144 words by 16 bits, giving a 256 K × 16 memory capacity. It offers a 15 ns access time, low active power of 1.43 W, and CMOS standby power of 2.75 mW.
The device is supplied in 44‑lead 400‑mil SOJ and 44‑lead TSOP Type II packages. The document includes detailed pin configurations, timing diagrams, switching characteristics, data‑retention behavior, and ordering codes for each package variant.
| Access time (tAA) | 15 ns |
|---|---|
| Low active power (max) | 1.43 W |
| CMOS standby power (L version, max) | 2.75 mW |
| Data retention voltage | 2.0 V |
| Package type (SOJ) | 44‑Lead (400‑Mil) Molded SOJ |
| Maximum operating current (12 ns version) | 280 mA |
The device has a typical access time of 15 ns.
It is offered in a 44‑lead 400‑mil SOJ package and a 44‑lead TSOP Type II package.
The maximum operating current is 280 mA for the 12 ns access‑time version.