Key facts
- Brand
- Cypress
- Model
- CY7C1009B
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-05-09
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Cypress CY7C109B and CY7C1009B 128K×8 SRAM Datasheet
The CY7C109B and CY7C1009B are high‑performance CMOS static RAM devices organized as 128K × 8 bits. They offer low active power, low standby power, and TTL‑compatible I/O with easy memory expansion via multiple chip‑enable and output‑enable options.
The document provides detailed electrical specifications, switching characteristics, data‑retention behavior, and package information for both parts, including SOJ and TSOP options. Timing diagrams and truth tables illustrate read and write cycles for designers.
Cypress CY7C1009B specifications
| Memory size | 128K × 8 bits |
|---|---|
| Maximum access time | 12 ns |
| Low active power | 495 mW (max.) |
| Low CMOS standby power | 55 mW (max.) |
| Data retention voltage | 2.0 V |
| Supply voltage range | -0.5 V to +7.0 V |
| Package (CY7C109B) | 400‑mil‑wide SOJ, 32‑pin TSOP |
| Package (CY7C1009B) | 300‑mil‑wide SOJ |
Source: Cypress CY7C109B and CY7C1009B 128K×8 SRAM Datasheet
All Cypress CY7C1009B documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum access time of the CY7C109B?
The CY7C109B has a maximum access time of 12 ns for the fastest speed grade.
How much power does the CY7C109B consume in active mode?
In active mode the device draws up to 495 mW (max. at 12 ns access time).
What is the maximum access time for the CY7C109B‑12?
The maximum access time is 12 ns.
What temperature range can the device be stored at?
The device can be stored from –65 °C to +150 °C.
