2SD1383K is a high-gain amplifier transistor produced by ROHM. The maximum collector-emitter voltage is 32V and the maximum collector current is 0.3A. 2SD1383K has the following features: 1. Darlington connection, high DC current gain; 2. Built-in 4kΩ resistor between base and emitter; 3. Complements the 2SB852K.
This datasheet describes the ROHM 2SD1383K high‑gain amplifier transistor, a Darlington‑connected device with a built‑in 4 kΩ resistor between base and emitter. It lists key features, dimensions, packaging, absolute maximum ratings, and detailed electrical characteristics.
The document also includes characteristic curves for power dissipation, current gain, and capacitance, as well as a notice outlining usage restrictions, safety considerations, and export requirements for the product.
| Collector‑base voltage (Vcbo) | 40 V |
|---|---|
| Collector‑emitter voltage (Vceo) | 32 V |
| Emitter‑base voltage (Vebo) | 6 V |
| Collector current (Ic) DC | 0.3 A |
| Power dissipation (P0) | 0.2 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Package type | SMT3 |
The maximum collector‑emitter voltage is 32 V.
It is supplied in an SMT3 surface‑mount package.
The device can be stored from –55 °C up to +150 °C.