IXTA/IXTP 3N120 and 3N110 are high voltage power MOSFETs from IXYS. They have international standard packages, low RDS(on), unclamped Inductive load Switching (UIS) rated values and UL 94 V-0 flammability classification advantages.
This document is a preliminary datasheet for the IXTA/IXTP 3N120 and IXTA/IXTP 3N110 series of high voltage power MOSFETs. These N-Channel Enhancement Mode devices are avalanche rated and designed for high dv/dt applications.
| Voss (Max) | 1200 V / 1100 V |
|---|---|
| P, (Max) | 150 W |
| Tay (Max) | 150 °C |