The document describes the features and characteristics of IXYS' high voltage power MOSFET products, including international standard packages, low RDS(on), and rated for unclamped inductive load switching (UIS).
The IXYS IXTA 3N120 and IXTP 3N120 are N‑channel enhancement‑mode power MOSFETs designed for high‑voltage applications. They feature low on‑resistance, high dv/dt capability, and are rated for unclamped inductive load switching.
The document provides electrical characteristics, maximum ratings, package dimensions for TO‑263 (IXTA) and TO‑220 (IXTP) outlines, and performance curves such as output characteristics, drain current versus case temperature, and capacitance.