This datasheet provides specifications of IXTH11P50N, including maximum ratings, characteristic values, characteristic curves, package and pin diagram, etc.
This document provides a comprehensive technical overview of the IXYS IXTH11P50 and IXTT11P50 P-channel enhancement mode power MOSFETs. It details maximum ratings such as drain-source voltage (-500 V) and continuous current (-11 A), along with key electrical characteristics including on-resistance, threshold voltage, and switching times.
| Drain-Source Voltage (VDS) | -500 V |
|---|---|
| Continuous Drain Current (ID) | -11 A |
| Power Dissipation (PD) | 300 W |
| On-Resistance (RDS(on)) | 0.75 Ω |
| Package Type TO-247 Weight | 6 g |
The maximum junction temperature (TJ) is +150 °C.
Yes, the device features Unclamped Inductive Switching (UIS) rating.