This is the datasheet of IXYS's 10P50 and 11P50 standard power MOSFET devices. The device has international standard packages, low RDS(on) HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect.
This document is a technical datasheet for the IXYS IXTH/IXTT series of P-Channel Enhancement Mode Avalanche Rated Power MOSFETs. It covers two specific models: the 10P50 and the 11P50, available in TO-247 AD (IXTH) and TO-268 (IXTT) packages.
| Drain-Source Voltage (VDS) | -500 V |
|---|---|
| Continuous Drain Current (ID) @ 25°C | 10P50: -10 A; 11P50: -11 A |
| Peak Diode Current (IAR) | 10P50: -10 A; 11P50: -11 A |
| Power Dissipation (PD) | 300 W |
| Operating Junction Temperature Range | -55 ... +150 °C |
| On-State Resistance (RDS(on)) @ 25°C | 10P50: 0.90 Ω; 11P50: 0.75 Ω |
| Input Capacitance (Ciss) | 4700 pF |
| Output Capacitance (Coss) | 430 pF |
The devices are available in TO-247 AD (IXTH) and TO-268 (IXTT) packages.
The maximum lead temperature is 300 °C at a distance of 1.6 mm from the case for 10 seconds.
The recommended mounting torque for the TO-247 package is 1.13 Nm or 10 lb.in.