The document describes symbol test conditions and maximum ratings, as well as the features and characteristics of a high voltage MOSFET device.
This document provides a datasheet for the IXYS IXTP 01N100D, an N-channel depletion mode high voltage MOSFET. Key features include normally ON operation, low on-resistance (RDS(on)), and rugged polysilicon gate cell structure designed for fast switching speeds.
| Drain-Source Breakdown Voltage (VDS) | 1000 V |
|---|---|
| Continuous Drain Current (ID) | 100 mA |
| On-Resistance (RDS(on)) | 90 Ω typ. |
| Gate Threshold Voltage (VGS(off)) | -2.5 to -5 V typ. |
| Package Type | TO-220AB (IXTP) |
The device is suitable for level shifting, triggers, solid state relays, and current regulators.
Pin 1 is Gate, Pin 2 is Drain, Pin 3 is Source, and Pin 4 is Drain Bottom Side.