01N100 is a high voltage MOSFET produced by IXYS. Its features are international standard package JEDEC TO-251 AA, low RDS(on), rugged polysilicon gate cell structure and fast switching times.
This document provides a technical overview of the IXYS 01N100 High Voltage MOSFET. It is an N-channel, enhancement mode device with a maximum drain-source voltage (VDSS) of 1000 V and a maximum continuous drain current (ID25) of 100 mA.
The datasheet includes comprehensive electrical characteristics such as threshold voltage, on-resistance, and switching times. It also lists maximum ratings for voltage and temperature, along with detailed mechanical dimensions for the TO-251 AA and TO-252 AA packages.
| Max Drain-Source Voltage (VDSS) | 1000 V |
|---|---|
| Max Continuous Drain Current (ID25) | 100 mA |
| On-Resistance (RDS(on)) | 80 mΩ |
| Operating Temperature Range (TJ) | -55 ... +150 °C |
| Package Types | TO-251 AA, TO-252 AA |
The device is suitable for level shifting, triggers, solid state relays, and current regulators.
The continuous gate-source voltage rating is ±20 V, with a transient limit of ±30 V.