Key facts
- Brand
- Atmel
- Model
- AT28C256
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-05
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Atmel AT28C256 256K Paged Parallel EEPROM Datasheet
Datasheet 27 pages · 553 KB · EN
The document describes the Atmel AT28C256, a high-performance electrically erasable and programmable read-only memory organized as 32,768 words by 8 bits. Manufactured with advanced nonvolatile CMOS technology, it offers access times to 150 ns and power dissipation of just 440 mW.
Read onlineAtmel AT28C256 specifications
| Memory Capacity | 256K (32,768 words x 8 bits) |
|---|---|
| Access Time | 150 ns (typical) |
| Page Write Cycle Time | 3 ms or 10 ms Maximum |
| Active Current (CMOS) | 50 mA |
| Standby Current (CMOS) | 200 pA |
| Endurance | 10^4 or 10^5 Cycles |
| Data Retention | 10 Years |
All Atmel AT28C256 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum page write cycle time?
The maximum page write cycle time is 10 ms.
How many bytes can be written in a single page operation?
Up to 64 bytes can be written simultaneously during a single internal programming period.
What supply voltage does the AT28C256 require?
The device operates from a single 5 V supply with a tolerance of ±10 %.
What is the maximum page write size?
Up to 64 bytes can be written in a single page write operation.