The AT28C256 is a high-performance electrically erasable and programmable read-only memory from Atmel. It features a 150ns read access time and 440mW power consumption. The device has 32768 8-bit words of 256KB of storage space and uses Atmel's advanced non-volatile CMOS technology. The AT28C256 can be accessed like a static random-access memory for reading or writing, without the need for external components. The device contains a 64-byte page register to allow simultaneous writing of up to 64 bytes of data. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other operations. After the start of a write cycle, the device will automatically write the address and data to the memory.
The document describes the Atmel AT28C256, a high-performance electrically erasable and programmable read-only memory organized as 32,768 words by 8 bits. Manufactured with advanced nonvolatile CMOS technology, it offers access times to 150 ns and power dissipation of just 440 mW.
| Memory Capacity | 256K (32,768 words x 8 bits) |
|---|---|
| Access Time | 150 ns (typical) |
| Page Write Cycle Time | 3 ms or 10 ms Maximum |
| Active Current (CMOS) | 50 mA |
| Standby Current (CMOS) | 200 pA |
| Endurance | 10^4 or 10^5 Cycles |
| Data Retention | 10 Years |
The maximum page write cycle time is 10 ms.
Up to 64 bytes can be written simultaneously during a single internal programming period.