Industrial

FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET is a 60V P-Channel MOSFET manufactured by Fairchild using Fairchild's high voltage PowerTrench process. This device has been optimized for power management applications.

This document describes the features and characteristics of the FDC602P P-Channel 2.5V PowerTrench MOSFET, which is suitable for battery management, load switch, and battery protection applications.

This document describes the FDC604P P-Channel MOSFET, which uses Fairchild's low voltage PowerTrench process and is suitable for battery power management applications. It features -5.5A, -20V, fast switching speed, and extremely low RDS(ON).

FDC606P is a P-channel MOSFET with a rated voltage of 1.8V, a maximum current of -6A, a maximum voltage of -12V, and a fast switching speed with extremely low RDS(ON).

FDC608PZ P-Channel 2.5V Specified PowerTrench® MOSFET is a high performance MOSFET manufactured by Fairchild Semiconductor. It is produced using the advanced PowerTrench process, and has low on-state resistance and low gate charge, making it suitable for battery power applications.

FDC610PZ is a P-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. It features extremely low on-state resistance and low gate charge, making it ideal for battery power applications such as load switching and power management, battery charging circuits, and DC/DC conversion.

The FDC6302P is a Fairchild dual P-channel digital field-effect transistor with a maximum power dissipation of 0.9 watts and a temperature range of -55 to 150°C. The device is designed for low voltage applications and can be used to replace digital transistors in load switching applications.

FDC6303N is a dual N-channel logic level enhancement mode field effect transistor produced using Fairchild's proprietary high cell density DMOS technology. It has very low on-state resistance. This device is specially designed for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required, this N-channel FET can replace several digital transistors with different bias resistors.

This document describes the features and absolute maximum ratings of the FDC6304P digital FET, a dual P-channel transistor produced in July 1997. It includes parameters such as voltage, current, power dissipation, temperature, etc. The product is manufactured using high-density DMOS technology and has characteristics such as low voltage drive, low on-state resistance, ESD ruggedness, etc. It is suitable for battery-powered applications such as notebook computers and cellular phones.

FDC6305N is a dual N-channel 2.5V specified PowerTrench MOSFET from Fairchild Semiconductor, featuring low gate charge, high switching speed and extremely low RDS(ON).

fdc6306p is a p-channel 2.5v specified mosfet produced by fairchild semiconductor. it uses fairchild semiconductor's advanced powertrench process, which has the characteristics of low on-state resistance and low gate charge. it is suitable for applications such as load switch, battery protection and power management.

FDC6310P is a dual P-channel 2.5V specified MOSFET produced by Fairchild Semiconductor Corporation. It features low on-state resistance and low gate charge, and is suitable for applications such as load switches, battery protection and power management.

This document describes the FDC6312P dual P-channel 1.8V specified MOSFET produced by Fairchild Semiconductor. The product is manufactured using Fairchild Semiconductor's advanced PowerTrench process, which is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance.

This document describes Fairchild Semiconductor's FDC6318P Dual P-Channel 1.8V PowerTrench MOSFET. The product is produced using advanced PowerTrench process, which minimizes on-state resistance and maintains low gate charge for superior switching performance.