Industrial

This datasheet provides the specifications of the FDB8447L N-Channel PowerTrench® MOSFET.

This document describes the features and characteristics of FDB8453LZ N-Channel PowerTrench® MOSFET, including maximum on-state resistance, ESD protection level, and fast switching.

FDB86102LZ is an N-Channel PowerTrench® MOSFET with a drain-to-source voltage of 100V, a drain current of 30A, and a maximum on-state resistance of 24mΩ. It features fast switching speed and very low total gate charge and gate-drain charge compared to competing trench technologies. It is suitable for applications such as DC-DC conversion, inverters, and synchronous rectifiers.

FDB86135 N-Channel PowerTrench MOSFET is a high-performance N-channel MOSFET with fast switching speed, low gate charge, extremely low RDS(on), and high power and current handling capability.

FDB8860 N-Channel Logic Level PowerTrench® MOSFET is a low RDS(ON), low Qg(5) N-channel logic level power MOSFET with UIS capability, RoHS compliant.

FDP8880 / FDB8880 is a N-Channel MOSFET from Fairchild Semiconductor Corporation. It features high performance trench technology for extremely low rDS(ON), low gate charge, high power and current handling capability, and is RoHS compliant.

This document describes the features and characteristics of the FDB8896 N-Channel PowerTrench® MOSFET. The product is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON), and fast switching speed.

This product is a 1.4A, 150V N-channel MOSFET that is optimized for low gate charge, low RDS(ON) and fast switching speed. It is suitable for DC/DC converter applications.

The document is the datasheet of FDC2612.

FDC3535 is a P-Channel MOSFET produced by Fairchild with extremely low rDS(on), high power and current handling capability, and is widely used in load switch and synchronous rectifier applications.

The FDC3612 is a 100V N-Channel PowerTrench MOSFET optimized for low gate charge, low RDS(ON) and fast switching speed, suitable for DC/DC converters.

FDC365P P-Channel PowerTrench® MOSFET is a P-type MOSFET manufactured by Fairchild Semiconductor, with a maximum current of -4.3A and a maximum on-resistance of 55mΩ.

The FDC5612 is a 60V N-Channel PowerTrench® MOSFET designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.