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FDA59N30 is a 300V N-channel MOSFET from Fairchild Semiconductor. It features 59A maximum current, 0.056 ohms on-resistance, 77 nC gate charge, 80 pF capacitance, fast switching speed, 100% avalanche tested and improved dv/dt capability.
This document describes the features of Fairchild Semiconductor Corporation's UniFET TM FDA69N25 250V N-Channel MOSFET, including 69A current, 250V voltage, low charge, and fast switching.
The FDA70N20 200V N-Channel MOSFET is a low-resistance, high-performance N-channel enhancement mode power field effect transistor manufactured using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switched mode power supplies and active power factor correction.
The FDA8440 N-Channel PowerTrench® MOSFET is a 40V, 100A, 2.1mΩ power MOSFET from Fairchild Semiconductor Corporation. It is mainly used in automotive engine control, powertrain management, motors, solenoids, electronic steering, integrated starter/alternator, distributed power architectures and VRMs.
FDB024N06 N-Channel PowerTrench® MOSFET is a high performance N-Channel MOSFET produced by Fairchild Semiconductor Corporation. This device features low RDS(on), fast switching speed, low gate charge, and is suitable for applications such as DC/DC converters and synchronous rectification.
This document describes the features and characteristics of the FDB031N08 N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation, including fast switching speed, low gate charge, high performance trench technology for extremely low on-state resistance, and high power and current handling capability.
The FDB035AN06A0 is a 60V, 80A, 3.5mΩ N-channel PowerTrench® MOSFET. It features low Miller charge, low Qrr body diode, UIS capability (single pulse and repetitive pulse), and is qualified to AEC Q101.
The FDB035N10A N-Channel PowerTrench® MOSFET is a high-performance N-channel MOSFET produced by Fairchild Semiconductor Corporation. It has a RDS(on) of 3.0mΩ, an ID of 75A, a VDSS of 100V, a high switching speed and a low gate charge.
The PDF document is the datasheet of FDB039N06 N-Channel PowerTrench® MOSFET. This MOSFET features low on-state resistance, fast switching speed and low gate charge, and is suitable for applications such as DC/DC converters and synchronous rectifiers.
The FDB047N10 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It features low RDS(on), fast switching speed, low gate charge, and is used in DC to DC converters and synchronous rectification.
This document describes the features and characteristics of the FDB050AN06A0 / FDP050AN06A0 N-Channel PowerTrench® MOSFET product from Fairchild Semiconductor Corporation, including a drain-to-source voltage of 60V, a drain current of 80A, a drain-to-source resistance of 5mΩ, and a low Miller charge and QRR body diode.
This datasheet provides the characteristics of the FDB060AN08A0 / FDP060AN08A0 N-Channel PowerTrench® MOSFET, including rated voltage, rated current, on-resistance, gate-to-source voltage, and gate-to-source voltage.
FDB070AN06A0 / FDP070AN06A0 is a N-Channel PowerTrench® MOSFET with an operating voltage of 60 V and current of 80 A. The typical on-resistance is 7mΩ.
FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench® MOSFET is a high performance MOSFET device produced by Fairchild Semiconductor Corporation. It has low RDS(on), low gate capacitance, high current handling capability and other features.
