FDC6305N is a dual N-channel 2.5V specified PowerTrench MOSFET from Fairchild Semiconductor, featuring low gate charge, high switching speed and extremely low RDS(ON).
This document is a datasheet for the Fairchild Semiconductor FDC6305N, a dual N-channel MOSFET utilizing the PowerTrench process. It is specified for a 2.5V threshold voltage and is designed for applications such as load switching, DC/DC conversion, and motor driving. The device is available in the SuperSOT-6 package, which offers a small footprint and low profile.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, thermal characteristics, and typical performance curves. Key specifications include a drain-source voltage of 20V, a continuous drain current of 2.7A, and a typical on-state resistance of 0.080 Ohms. It also details switching characteristics, capacitance values, and safe operating areas.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | 48 V |
| Pulsed Drain Current | 8 A |
| Operating Junction Temperature | -55 to +150 °C |
| Package Type | SuperSOT-6 |
| Gate Charge (Typical) | 3.5 nC |
The device is suitable for use as a load switch, in DC/DC converters, and for motor driving.
The typical on-state resistance is 0.080 Ohms at a drain current of 2.7A.
The maximum continuous drain current is 2.7 Amperes.