Industrial

This document describes a P-Channel 2.5V PowerTrench MOSFET product produced using Fairchild Semiconductor's advanced process. It has low on-state resistance and low gate charge, making it suitable for battery power applications including load switching and power management, battery charging circuits, and DC/DC conversion.

The FDC6392S is a 20V integrated P-channel PowerTrench MOSFET and Schottky diode from Fairchild Corporation. It features a fast switching, low gate charge MOSFET with very low on-state resistance.

This document describes the FDC6401N Dual N-Channel MOSFET, which is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.

FDC640P is a rugged 2.5V P-channel MOSFET using a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

FDC6420C is a 20V N & P-Channel MOSFET produced by Fairchild Semiconductor using advanced PowerTrench process. The device has extremely low RDS(ON) and superior switching performance. It is packaged in SuperSOT-6 with 72% smaller footprint and 1mm thickness.

The FDC642P is a single-channel 2.5V specified power MOSFET with features such as fast switching speed, low gate charge, and extremely low on-state resistance. It is produced using Fairchild's advanced PowerTrench® process to minimize on-state resistance and maintain low gate charge for superior switching performance.

FDC6506P is a P-channel logic level MOSFET produced by Fairchild Semiconductor. It is produced using Fairchild Semiconductor's advanced PowerTrench process and has low on-state resistance and low gate charge. It is suitable for applications such as load switch, battery protection and power management.

FDC653N is a Fairchild N-channel enhancement mode power field effect transistor, manufactured using Fairchild's proprietary high cell density DMOS technology. It is particularly suitable for low voltage applications in notebook computers, portable phones, PCMICA cards and other battery powered circuits where fast switching and low in-line power loss are required in a very small outline surface mount package.

FDC654P is a P-channel logic level MOSFET produced by Fairchild, suitable for battery power management applications. It features low RDS(ON), low gate charge and high performance trench technology.

FDC655BN is a N-channel logic level MOSFET from Fairchild Semiconductor with extremely low RDS(on), fast switching and low gate charge.

This document describes the FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET, released in April 1999. The product features a continuous drain current of 2.5A and a drain-source voltage of 30V. It is produced using Fairchild Semiconductor's advanced PowerTrench process, which minimizes on-state resistance and gate charge for superior switching performance. The MOSFET is well-suited for applications requiring small size and low-cost DC/DC conversion in battery-powered systems.

This document describes the features and characteristics of the FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET, which is suitable for battery management, load switch, battery protection, and DC/DC conversion applications.

FDC658P is a P-Channel Logic Level MOSFET produced by Fairchild Semiconductor. It has extremely low RDS(ON) and low gate charge and is well suited for notebook computer applications such as load switching and power management, battery charging circuits and DC/DC conversion.

The FDC855N is an N-channel logic level MOSFET from Fairchild Semiconductor with a 30V, 6.1A, 27mΩ rating. It is ideal for applications where in-line power loss is critical.