MOSFET Manuals

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Manuals

53

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3

Languages

ZH

Last added

2026-09-30

Featured MOSFET manuals

Jilin Sino-microelectronics JCS7N65B N-Channel MOSFET Datasheet

Datasheet 10 pages · 645 KB · ZH

The JCS7N65B is an N‑channel enhancement‑mode MOSFET designed for high‑frequency switching power supplies, electronic lamp ballasts and UPS applications. It offers a 650 V drain‑source rating, low gate charge (25 nC) and fast switching performance while meeting RoHS requirements.

This datasheet provides absolute maximum ratings, detailed electrical parameters such as on‑resistance, gate charge and capacitances, thermal characteristics, mechanical dimensions for TO‑220C and TO‑220MF packages, and ordering information. Designers can use the curves and tables to verify suitability for their circuits. This manual is written in Chinese.

Covers: Main Characteristics · Absolute Ratings · Electrical Characteristics · Switching Characteristics · Thermal Characteristics · Package Mechanical Data

Fuman TC4953ES MOSFET Datasheet

Datasheet 3 pages · 163 KB · ZH

The TC4953ES is a P‑channel enhancement MOSFET fabricated with advanced CMOS technology. It offers strong ESD protection (HBM > 6 kV) and a low gate‑threshold voltage of –0.6 V.

Key electrical ratings include a maximum drain‑source voltage of –10 V, a maximum gate‑source voltage of –5 V, and a continuous drain current of –3 A. Typical on‑resistance is 85 mΩ at VGS = –4.5 V and 110 mΩ at VGS = –2.5 V. The device is supplied in an SOP‑8 package. This manual is written in Chinese.

Covers: Features · Maximum Ratings and Thermal Characteristics · Electrical Characteristics · Package Information

Latest MOSFET manuals

• Jilin Sino-microelectronics JCS7N65B N-Channel MOSFET Datasheet

  Datasheet 10 pages · 645 KB · ZH

  Technical datasheet for the JCS7N65B N‑channel MOSFET by Jilin Sino‑microelectronics, detailing ratings, electrical characteristics and packaging.

• Fuman TC4953ES MOSFET Datasheet

  Datasheet 3 pages · 163 KB · ZH

  The TC4953ES is an 11 V P‑channel enhancement MOSFET with low on‑resistance and high ESD protection.

• NXP PMPB95ENEA MOSFET

  N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

• NXP PSMN1R1-30PL MOSFET

  Logic level N-channel MOSFET in TO-220 package qualified to 175

• NXP PMXB65UPE MOSFET

  P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

• NXP PMV48XPA MOSFET

  P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

• NXP PSMN1R0-30YLD MOSFET

  Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP

• NXP PSMNR90-30BL MOSFET

  Logic level N-channel MOSFET in D2PAK package qualified to 175

• NXP PSMN4R2-30MLD MOSFET

  Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP

• NXP PMN42XPEA MOSFET

  P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

• NXP PSMN013-100BS MOSFET

  P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

• NXP PSMN075-100MSE MOSFET

  New standards and proprietary approaches are enabling the next generation of Powerover- Ethernet (PoE) systems capable of delivering up to 100W to each powered device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom CCTV cameras, for example, are placing increased demands on the power sourcing equipment (PSE) in terms of

• NXP PMV130ENEA MOSFET

  N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

• NXP PMPB215ENEA MOSFET

  N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

• NXP PSMN6R3-120ES MOSFET

  Standard level N-channel MOSFET in I2PAK package qualified to 175

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