The FDC6302P is a Fairchild dual P-channel digital field-effect transistor with a maximum power dissipation of 0.9 watts and a temperature range of -55 to 150°C. The device is designed for low voltage applications and can be used to replace digital transistors in load switching applications.
The Fairchild FDC6302P is a Dual P-Channel logic level enhancement mode field effect transistor produced using Fairchild's proprietary DMOS technology. It is designed for low voltage applications as a replacement for digital transistors in load switching applications, eliminating the need for bias resistors. The device features very low gate drive requirements, allowing direct operation in 3V circuits, and includes a Gate-Source Zener for ESD ruggedness.
| Drain-Source Voltage | -25 V |
|---|---|
| Gate-Source Voltage | 8 V |
| Drain Current - Pulsed | 0.5 A |
| Maximum Power Dissipation | 0.9 W |
| Operating and Storage Temperature Range | -55 to 150 °C |
| ESD Rating (Human Body Model) | 6.0 kV |
| Thermal Resistance, Junction-to-Ambient | 140 °C/W |
| Thermal Resistance, Junction-to-Case | 60. °C/W |
It is designed especially for low voltage applications as a replacement for digital transistors in load switching applications.
No, since bias resistors are not required, this one P-Channel FET can replace several digital transistors with different bias resistors.
It has very low level gate drive requirements allowing direct operation in 3V circuits with Vgs < 1-5V.