FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET is a 60V P-Channel MOSFET manufactured by Fairchild using Fairchild's high voltage PowerTrench process. This device has been optimized for power management applications.
This document is a datasheet for the Fairchild Semiconductor FDC5614P, a 60V P-Channel MOSFET utilizing the PowerTrench process. It is optimized for power management applications such as DC-DC converters and load switches. Key features include a 3A continuous drain current, fast switching speed, and low on-resistance.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical performance curves. It details parameters such as drain-source breakdown voltage, gate threshold voltage, on-resistance, and switching times. The document also includes information on thermal characteristics, package marking, and ordering information.
| Drain-Source Voltage | -60 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | -3 A |
| Maximum Power Dissipation | 1.6 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Ambient | 78 °C/W |
| Thermal Resistance Junction-to-Case | 30 °C/W |
| Gate Threshold Voltage | -1 to -3 V |
| Static Drain-Source On-Resistance | 0.105 to 0.135 Ohm |
The device is optimized for power management applications, specifically DC-DC converters and load switches.
The maximum continuous drain current is -3 A.
The operating and storage junction temperature range is from -55 to +150 °C.