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This document describes the features and characteristics of the FDC6320C dual N&P channel digital field effect transistor released in October 1997, including parameters such as operating voltage, maximum power, temperature range, etc. The product has low-level gate drive requirements and can be directly operated in 3V circuits. It is suitable for low voltage applications as a replacement for bipolar digital transistors.
The ATS651LSH is a two-wire self-calibrating differential speed and direction sensor with vibration immunity produced by Allegro MicroSystems, Inc. It provides an easy-to-use solution for speed and direction sensing applications.
The FCP380N60E / FCPF380N60E is a 600V N-channel MOSFET from Fairchild Semiconductor Corporation with a maximum rating of 600V and a maximum on-resistance of 380mΩ. It has ultra-low gate charge and low effective output capacitance.
FCP4N60 is a 600V N-Channel MOSFET with low conduction loss, superior switching performance, and high voltage withstand capability. It is suitable for various AC/DC power conversion applications.
FCP7N60/FCPF7N60/FCPF7N60YDTU is a new generation high voltage MOSFET family from Fairchild Semiconductor Corporation. It features low on-resistance, low gate charge, and is suitable for various AC/DC power conversion and switching mode operation.
FCP9N60N / FCPF9N60NT N-Channel MOSFET is a high voltage super-junction MOSFET from Fairchild Semiconductor Corporation, employing a deep trench filling process that differentiates it from preceding multi-epi based technologies. It provides world class Rsp, superior switching performance and ruggedness.
This document describes the features and characteristics of FCPF400N60 N-Channel MOSFET, including maximum drain current, thermal characteristics, maximum operating temperature range, etc.
The SI-3018LSA is a low-voltage, high-current 1.8 V linear regulator designed to meet the requirement for increased integration and reliability in low-voltage, high-current, linear regulator applications such as personal computers (PCs) and set-top boxes.
SupreMOS TM FCP7N60N/FCPF7N60NT N-Channel MOSFET is a high voltage super-junction MOSFET from Fairchild Semiconductor Corporation. It employs a deep trench filling process and has a typical RDS(on) of 0.46 ohms and a typical Qg of 17.8 nF. It is RoHS compliant.
ATS645 is a fully optimized differential digital gear tooth sensor with high reliability. Its features include internal current regulator, small mechanical size, air gap independent switchpoints, precise duty cycle signal, automatic gain control and offset adjustment, true zero-speed operation, etc.
The FDA032N08 is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It has low RDS(on), high switching speed, low gate charge, high performance Trench technology and is RoHS compliant. It is suitable for DC/DC converters/synchronous rectification applications.
This document describes the features and characteristics of the FDA15N65 650V N-Channel MOSFET from the UniFET TM series, including 16A current, 650V voltage, 0.44Ω on-state resistance, low gate charge, and fast switching speed.