Industrial

FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ is a low-resistance power MOSFET produced by Fairchild Semiconductor Corporation. It has low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse) and other features.

FDB2552 / FDP2552 is a N-Channel PowerTrench® MOSFET with 150V, 37A and 36mΩ features. It features low Miller charge, low QRR body diode and UIS capability (single pulse and repetitive pulse).

This document describes the features and characteristics of the N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ product manufactured by Fairchild Semiconductor Corporation.

ATS610LSC is a dynamic, peak-detecting, differential Hall-effect gear-tooth sensor designed for digital gear-tooth sensing applications. The sensor is housed in a high-temperature plastic shell and integrates an optimized Hall IC, magnet subassembly, pole piece, and voltage regulator. It can be used with various gear or target shapes and sizes and offers increased immunity to false switching. The sensor subassembly is ideal for gathering speed, position, and timing information using gear-tooth-based configurations. It utilizes Hall-effect technology and incorporates a dual-element Hall IC that switches in response to differential magnetic signals created by the ferrous target. The sensor includes a patented track-and-hold peak-detecting circuit to eliminate magnet and system offset effects and provides stable operation at extremely low rotation speeds.

FCA16N60N N-Channel MOSFET is a high performance product from Fairchild Semiconductor Corporation. This product uses an advanced deep trench filling process and has ultra-low RDS(on), ultra-low gate charge, low effective output capacitance and other features.

This document describes the features and characteristics of Fairchild Semiconductor Corporation's FCA20N60F 600V N-CHANNEL FRFET product, including 650V operating voltage, low on-resistance, fast recovery type, ultra low gate charge, low effective output capacitance, etc.

ATS622LSB data sheet is a hall effect gear tooth sensor that uses an optimized Hall-effect sensing integrated circuit and magnet combination to provide a user-friendly solution for true zero-speed digital gear tooth sensing. The sensor module consists of a plastic shell that holds together a samarium-cobalt magnet, a pole piece, and a Hall-effect sensor that has been optimized to the magnetic circuit. This small package can be easily assembled and used in conjunction with a wide variety of gear shapes and sizes. The integrated circuit incorporates a dual-element Hall-effect sensor and signal processing that switches in response to differential magnetic signals created by the ferrous gear teeth. The circuitry contains a sophisticated digital circuit to eliminate magnet and system offsets and to achieve true zero-speed operation (manufactured under U.S. Pat. 5,917,320). A-to-D and D-to-A converters are used to adjust the device gain at power on and to allow air-gap independent switching, which greatly reduces vibration sensitivity of the device. This sensor system is ideal for obtaining transmission and crank information using gear-tooth-based configurations.

ATS535JSB and ATS535SSB programmable, true power-on (TPOS), proximity sensors provide power-on tooth/valley recognition in large gear-tooth sensing applications and proximity detection in other applications.

FCA35N60 600V N-Channel MOSFET is a new generation of high voltage MOSFET family developed by Fairchild Corporation. It has a maximum breakdown voltage of 650V, a low on-resistance of 0.079Ω and a low output capacitance of 340pF.

This document describes the features and characteristics of the FCA36N60NF N-Channel MOSFET, FRFET product, including its low on-resistance, ultra-low gate charge, low output capacitance, 100% avalanche tested, etc. This product is suitable for AC-DC SMPS, PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.

ATS632LSC HALL-EFFECT GEAR-TOOTH SENSOR SUBASSEMBLY is a zero-speed, self-calibrating, non-oriented, hall-effect gear-tooth sensor.

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET is a high performance MOSFET device from Fairchild with outstanding low on-resistance, ultra low gate charge and high voltage capability. This device is very suitable for various AC/DC power conversion applications for system miniaturization and higher efficiency.

FCA47N60F 600V N-Channel MOSFET, FRFET is a high performance new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance, suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

FCA76N60N N-Channel MOSFET, is Fairchild's next generation of high voltage super-junction MOSFETs, employing a deep trench filling process that differentiates it from preceding multi-epi based technologies. This product provides world class Rsp, superior switching performance and ruggedness.