FDC608PZ P-Channel 2.5V Specified PowerTrench® MOSFET is a high performance MOSFET manufactured by Fairchild Semiconductor. It is produced using the advanced PowerTrench process, and has low on-state resistance and low gate charge, making it suitable for battery power applications.
This document is a datasheet for the Fairchild Semiconductor FDC608PZ, a P-Channel 2.5V specified PowerTrench MOSFET. The device is designed using advanced PowerTrench technology to minimize on-state resistance while maintaining low gate charge, making it suitable for battery power applications such as load switching, power management, and DC/DC conversions. It is available in a SuperSOT-6 package with a small footprint and low profile.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, off and on characteristics, dynamic characteristics, and switching parameters. It also includes typical performance graphs illustrating on-resistance variation with temperature and drain current, as well as safe operating area and transient thermal response curves. The document concludes with trademark information and a disclaimer regarding product specifications and liability.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | +12 V |
| Continuous Drain Current | -5.8 A |
| Maximum Power Dissipation | 1.6 W |
| Operating Junction Temperature Range | -55 to +150 C |
| Thermal Resistance Junction-to-Ambient | 78 C/W |
| Thermal Resistance Junction-to-Case | 30 C/W |
| Package Type | SuperSOT-6 |
The maximum continuous drain current is -5.8 A.
The maximum power dissipation is 1.6 W when mounted on a 1-inch pad of 202 copper on FR-4 board.
The thermal resistance from junction to ambient is 78 °C/W when mounted on a 1-inch pad of 202 copper on FR-4 board.