Industrial

This datasheet is for FDB082N15A N-Channel PowerTrench® MOSFET. It has RDS(on) = 6.7mΩ ( Typ.)@ VGS = 10V, ID = 75A, fast switching speed, low gate charge, high performance trench technology, extremely low RDS(on), high power and current handling capability, and is RoHS compliant.

FDB088N08 N-Channel PowerTrench® MOSFET is a low RDS(on), fast switching speed, high voltage, and high current product. It is suitable for DC/DC converter and synchronous rectifier applications.

This document describes the features and characteristics of FDB120N10 N-Channel PowerTrench® MOSFET, including low on-state resistance, fast switching speed, low gate charge, and high power handling capability.

This document describes the features and characteristics of the UniFET TM FDB12N50F N-Channel MOSFET product produced by Fairchild Corporation, including low on-state resistance, low gate charge, fast switching speed, 100% avalanche tested, improved dv/dt capability, etc.

ATS625LSG is a digital gear tooth sensor produced by Allegro, which has high repeatability, high accuracy, high reliability and other characteristics.

This product is an N-channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. It has low on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This product is well suited for high efficient switched mode power supplies and active power factor correction.

This product is a N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, high energy pulse withstand capability, and is well suited for high efficiency switching mode power supplies and active power factor correction applications.

FDB13AN06A0/FDP13AN06A0 is a N-channel PowerTrench® MOSFET produced by Fairchild Semiconductor. Its rated voltage is 60V, rated current is 62A, and on-resistance is 13.5mΩ.

This document describes the features and characteristics of the ATS616LSG-DS model, a dynamic self-calibrating peak-detecting differential Hall effect gear tooth sensor. The sensor features self-calibration, tight timing accuracy, first-tooth detection, immunity to air gap variation and system offsets, and other capabilities.

ATS612LSG Dynamic, Self-Calibrating, Peak-Detecting, Differential Hall-Effect Gear-Tooth Sensor

This datasheet introduces the features of ATS612LSB gear tooth sensor, including automatic gain control, differential open-collector Hall IC, high-temperature plastic shell, small package, and a variety of gear shapes and sizes

This document describes the Fairchild Semiconductor Corporation's FDB150N10 N-Channel PowerTrench® MOSFET. The product has a rated voltage of 100V, a rated current of 57A, and an on-state resistance of 15mΩ. It is produced using advanced PowerTrench process to achieve lower on-state resistance and superior switching performance. It is suitable for applications such as DC to DC converters and synchronous rectification.

This document describes the features and characteristics of the FDH15N50 / FDP15N50 / FDB15N50 products, which are suitable for switch mode power supplies (SMPS). The products have features such as low gate charge, improved gate, avalanche and high reapplied dv/dt ruggedness, reduced rDS(ON), reduced Miller capacitance and low input capacitance, improved switching speed with low EMI, and a rated junction temperature of 175°C.