Industrial

This PDF document is the datasheet of FDB3502 N-Channel Power Trench® MOSFET. Its features include Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A, 100% UIL Tested, RoHS Compliant.

FDB3632/FDP3632/FDI3632/FDH3632 is a N-channel PowerTrench® MOSFET with an operating voltage of 100V and a typical on-resistance of 7.5mΩ.

This document describes the features and characteristics of FDB3682 / FDP3682 N-Channel PowerTrench® MOSFET, including its low on-resistance, low Miller charge, low QRR body diode, UIS capability, and applicable applications.

FDB3860 is a N-Channel MOSFET manufactured by Fairchild Semiconductor, with high performance trench technology and low RDSon characteristics, suitable for a wide range of switching applications.

FDB390N15A N-Channel PowerTrench® MOSFET datasheet, the device has low RDS(on), fast switching speed, low gate charge, high performance trench technology, and can be used for DC to DC converters, synchronous rectifiers, etc.

FDB44N25 is a 250V N-Channel MOSFET produced by Fairchild, with a rated current of 44A, 0.069Ω RDS(on), low gate charge and Crss, fast switching, 100% avalanche testing, and improved dv/dt capability.

FDB52N20 is a 200V N-channel MOSFET with a low on-state resistance of RDS(on) = 0.049Ω@VGS = 10V, low gate charge (typical 49 nC), low Crss (typical 66 pF), fast switching, 100% avalanche tested, and improved dv/dt capability.

This document describes the features and characteristics of the FDB5800 N-Channel Logic Level PowerTrench® MOSFET. The product features include low Rdson, low gate charge, high power and current handling capability, etc. It is suitable for applications such as motor/body load control, ABS systems, power train management, injection systems, DC-DC converters, and off-line UPS.

FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET is a logic level MOSFET from Fairchild Semiconductor Corporation. It features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

This document is about FDP6670AL/FDB6670AL N-Channel Logic Level PowerTrench MOSFET. The product is designed to improve the efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs have faster switching and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications. This results in a MOSFET that is easier and safer to drive (even at high frequencies) and DC/DC power supply designs with higher overall efficiency. It is optimized for low gate charge, low RDS(ON), and fast switching speed.

This is a document about FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET. The product is designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs have faster switching and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications. This results in a MOSFET that is easier and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON), and fast switching speed.

This datasheet details the features and characteristics of the FDP8030L/FDB8030L N-Channel Logic Level PowerTrench® MOSFET.

FDB8443 N-Channel PowerTrench® MOSFET is a 40V, 182A, 3.0mΩ power MOSFET with low Miller Charge, low Qrr Body Diode, UIS Capability (Single Pulse and Repetitive Pulse) features.

This datasheet provides the characteristics parameters of FDB8444 N-Channel PowerTrench® MOSFET, including typical values, minimum values, maximum values, etc.

The FDB8445 is a N-channel power MOSFET from Fairchild. Its typical on-resistance is 6.8mΩ and typical gate charge is 44nC.