Industrial

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET is a low on-resistance, low gate charge, low Crss, fast switching, 100% avalanche tested N-channel MOSFET.

The ATS643 is an optimized combination of integrated circuit and magnet that provides a manufacturer-friendly solution for true zero-speed digital gear-tooth sen. The sensor features precise duty cycle accuracy, large operating air gaps, low power consumption and fast start-up time.

This document describes the features and characteristics of Fairchild Semiconductor Corporation's UniFET TM FDA18N50 500V N-Channel MOSFET, including 19A current, 500V voltage, low charge and capacitance, fast switching speed, etc.

The FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild using its proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

The ATS642LSH is an optimized Hall effect sensing integrated circuit and magnet combination that provides a user-friendly solution for true zero-speed digital gear-tooth sensing in two-wire applications. The sensor consists of a single-shot molded plastic package that includes a samarium cobalt magnet, a pole piece, and a Hall effect IC that has been optimized to the magnetic circuit. This small package, with optimized two-wire leadframe, can be easily assembled and used in conjunction with a wide variety of gear shapes and sizes. The integrated circuit incorporates a dual element Hall effect sensor and signal processing engine, which provides high-precision, reliable gear tooth sensing.

FDA20N50F N-Channel MOSFET is a high performance N-channel enhancement mode power field effect transistor manufactured by Fairchild. The device features low on-state resistance, low gate charge, fast switching speed, 100% avalanche tested and is well suited for high efficient switched mode power supplies and active power factor correction applications.

This document describes the features and characteristics of the UniFET TM FDA24N40F N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It has features such as 400V voltage, 23A current, 0.19Ω resistance, etc., and is suitable for high efficient switched mode power supplies and active power factor correction.

FDA24N50 N-Channel MOSFET is a high-performance MOSFET produced by Fairchild. It features low resistance, low gate charge, low Crss, fast switching, 100% avalanche testing, and is well suited for high-efficiency power supply and active power factor correction applications.

This document describes the features and characteristics of Fairchild Semiconductor Corporation's UniFET TM FDA24N50F N-Channel MOSFET, including a drain-to-source voltage of 500V, a drain current of 24A, and an on-state resistance of 0.2Ω.

This document describes the features and characteristics of Fairchild Semiconductor Corporation's UniFET TM FDA28N50 N-Channel MOSFET product, including a rated voltage of 500V, a rated current of 28A, and an on-state resistance of 0.155Ω.

This document introduces Fairchild's UniFET TM FDA28N50F N-Channel MOSFET, which has a voltage of 500V, a current of 28A, and a resistance of 0.175Ω. Its features include low gate charge, low output capacitance, fast switching, 100% avalanche tested, improved dv/dt capability, and RoHS compliance.

This document describes the FDA38N30 N-Channel MOSFET produced by Fairchild Semiconductor Corporation. The features include a drain-to-source voltage of 300V, a drain current of 38A, an on-state resistance of 0.085Ω, low gate charge, fast switching, 100% avalanche tested, improved dv/dt capability, and RoHS compliance. The product is suitable for high-efficiency switched mode power supplies and active power factor correction.

The ATS635LSE and ATS636LSE programmable, true power-on state (TPOS), sensors are an optimized Hall-effect IC and magnet combination that switch in response to magnetic signals created by ferrous targets in gear-tooth sensing and proximity applications. The devices are externally programmable. A wide range programmability is available on the magnetic operate point (BOP) while theof hysteresis remains fixed. This advanced feature allows for optimization of the sensor switch point and can drastically reduce the effects of mechanical placement tolerances found in production environments . A proprietary dynamic offset cancellation technique, with an internal high-frequency clock, reduces the residual offset voltage, which is normally caused by device overmolding, temperature dependencies, and thermal stress. Having the Hall element and amplifier in a single chip minimizes many problems normally associated with low-level analog signals. This sensor system is ideal for use in gathering speed or position information using gear-tooth-based configurations, or for proximity sensing with ferrous targets. The ATS635LSE switches HIGH in the presence of a ferrous target or tooth and switches LOW in the presence of a target valley, window, or when the ferrous target is removed. The ATS636LSE has the opposite polarity and switches LOW in the presence of a ferrous target

FDA59N25 is a 250V N-channel MOSFET produced by Fairchild. It has a maximum current of 59A, a RDS(on) of 0.049Ω, a gate charge of 63nC and a Crss of 70pF. It is well suited for high efficiency switched mode power supplies and active power factor correction.