Industrial

FDD306P P-Channel 1.8V Specified PowerTrench ® MOSFET is a high performance low voltage power transistor with extremely low ON-resistance (R DS(ON) = 28 m Ω @ V GS = –4.5 V), optimized for battery power management.

FDD3510H is a dual N and P-channel enhancement mode Power MOSFETs produced by Fairchild Semiconductor using the company's advanced PowerTrench® process, which has been specially tailored to minimize on-state resistance and yet maintain superior switching performance.

This product is a 100V N-Channel PowerTrench MOSFET with a maximum current of 34A and a maximum gate voltage of 20V. It features a fast switching speed, low gate charge, high power and current handling capability.

This document describes the features and characteristics of the FDD3672 N-Channel UltraFET® Trench MOSFET, including rated voltage, current, on-resistance, total gate charge, etc.

This document introduces the FDD3680 N-Channel PowerTrench MOSFET, which is designed specifically to improve the overall efficiency of DC/DC converters. It features faster switching speed and lower gate charge than other MOSFETs with comparable RDS(ON) specifications, making it easier and safer to drive (even at very high frequencies). By using this MOSFET, DC/DC power supply designs with higher overall efficiency can be achieved.

The FDD3682 is a N-channel MOSFET manufactured by Fairchild Semiconductor. It has a maximum voltage of 100V, a maximum current of 32A and a typical on-resistance of 36mΩ. The product uses PowerTrench technology and features low Miller charge and low QRR body diode characteristics. It is qualified to AEC Q101 and is suitable for applications such as DC/DC converters and off-line UPS, distributed power architectures and VRMs, primary switches for 24V and 48V systems, high voltage synchronous rectifiers, direct injection/diesel injection systems, 42V automotive load control and electronic valve train systems.

This document introduces the FDD3690 model N-channel power MOSFET, which is designed to improve the overall efficiency of DC/DC converters. It features faster switching and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications. It is suitable for synchronous or conventional switching PWM controllers. The MOSFET is easy and safer to drive, even at very high frequencies, and enables DC/DC power supply designs with higher overall efficiency.

The FDD3706/FDU3706 is a N-Channel MOSFET from Fairchild Semiconductor Corp. It features low on-resistance, low gate charge, fast switching speed, and is suitable for applications such as DC/DC converters and motor drives

The FDD3860 is an N-Channel MOSFET from Fairchild Semiconductor that has extremely low on-resistance and has passed 100% UIL testing. It is RoHS compliant.

FDD390N15A N-Channel PowerTrench® MOSFET is a N-channel MOSFET produced by Fairchild Semiconductor using advanced PowerTrench process. It has the advantages of low RDS(on) and high switching speed.

The FDD390N15ALZ is a N-channel MOSFET produced by Fairchild Semiconductor. It has a maximum rated voltage of 150V and a maximum continuous current of 26A. It has a fast switching speed, low gate charge, high performance, low RDS(on), high power and current handling capability.

FDB2614 is a 200V N-channel power Trench MOSFET, produced using Fairchild Semiconductor's advanced PowerTrench process that has been specially tailored to minimize on-state resistance while still maintaining superior switching performance.

This document describes the features and characteristics of the FDB2710 250V N-Channel PowerTrench MOSFET, which is produced using Fairchild Semiconductor's advanced PowerTrench process to minimize on-state resistance and maintain superior switching performance.

This document describes the features and characteristics of the FDB28N30 N-Channel MOSFET, including low on-state resistance, low gate charge, fast switching speed, 100% avalanche tested, and improved dv/dt capability.

This document describes the features and characteristics of the FDB33N25 / FDI33N25 250V N-Channel MOSFET, including 33A current, 250V voltage, low gate charge, and low Crss.