Industrial

FDC8601 is a N-Channel Power Trench® MOSFET produced by Fairchild Semiconductor, which has extremely low rDS(on), high power and current handling capability, and is widely used in load switch, synchronous rectifier and primary switch MOSFET circuits.

FDC8602 is a dual N-Channel PowerTrench MOSFET produced by Fairchild Semiconductor. It has extremely low RDS(on), high power and current handling capability, and is suitable for load switching and synchronous rectification applications.

The FDC86244 N-Channel Power Trench® MOSFET is a high performance power MOSFET with extremely low rDS(on) and fast switching speed, which is suitable for load switch, synchronous rectifier and primary switch applications.

This document describes the features and characteristics of FDC8878 N-Channel PowerTrench® MOSFET, including maximum on-resistance, fast switching speed, etc.

This document describes the features and characteristics of the FDC8884 N-Channel Power Trench® MOSFET, including maximum on-resistance, fast switching speed, etc.

The FDC8886 is a high performance N-channel power MOSFET from Fairchild Semiconductor with a maximum on-resistance of 23 mΩ and fast switching speed.

This document describes the features and characteristics of the FDD050N03B N-Channel PowerTrench® MOSFET, including low on-state resistance, fast switching speed, low gate charge, high power and current handling capability, etc.

This document describes the features and characteristics of the FDD10AN06A0 N-Channel PowerTrench MOSFET, including its resistance, charge, and voltage rating.

FDD10N20LZ is a N-Channel MOSFET produced by Fairchild company. It has a maximum voltage of 200V and a maximum current of 7.6A. This product has the characteristics of low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche testing, improved dv/dt capability and RoHS compliance.

FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ is a low leakage current, low on-resistance, high voltage, high temperature N-channel MOSFET produced by Fairchild Semiconductor Corporation. It is suitable for DC/DC Converters and Off-line UPS, Distributed Power Architectures and VRMs, Primary Switch for 24V and 48V Systems, High Voltage Synchronous Rectifier, Direct Injection / Diesel Injection Systems, Electronic Valve Train Systems and other applications.

FDD16AN08A0 is a N-channel super trench MOSFET from Fairchild Semiconductor Corporation. It features Rds(on) of 13mOhm(typ.), Vgs of 10V, ID of 50A, Qg(tot) of 31nC(typ.), Vgs of 10V, low Miller charge, low Qrr body diode, UIS capability (single pulse and repetitive pulse), qualified AEC Q101, formerly developmental type 82660. Applications include 42V automotive load control, starter/alternator systems, electronic power steering systems, electronic valve train systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, 24V and 48V systems primary switch.

This document describes the features and characteristics of the FDD18N20LZ N-Channel MOSFET, including maximum rated voltage, maximum drain current, and thermal characteristics.

FDD2572 / FDU2572 is an N-channel PowerTrench® MOSFET power field-effect transistor with a voltage of 150V, a current of 29A, and an on-resistance of 54mΩ. It features low Miller charge, low QRR body diode, UIS capability, and compliance with AEC Q101 standards.

FDD2582 is a N-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation with a maximum voltage of 150V and a maximum current of 21A, with a typical on-resistance of 58mΩ.

This document is the English datasheet of FDD2670, which introduces the features of FDD2670, including rated voltage, rated current, switching speed, etc.