This document describes the features and characteristics of the FDC602P P-Channel 2.5V PowerTrench MOSFET, which is suitable for battery management, load switch, and battery protection applications.
The document describes the Fairchild FDC602P, a P-Channel MOSFET utilizing the advanced PowerTrench process. It is specifically designed for battery management and load switch applications with a gate drive voltage range of 2.5V to 12V.
Key features include fast switching speed and high-performance trench technology resulting in extremely low on-resistance (Rds(on)). The device offers continuous drain current capabilities up to -5.5A and operates within a junction temperature range of -55°C to +150°C.
| Drain-Source Voltage (Vdss) | -20 V |
|---|---|
| Gate-Source Voltage (Vgss) | +12 V |
| On-Resistance at Vgs=-2.5V, Id=-4.5A | 38 mΩ (Typ) |
| Maximum Power Dissipation | 1.6 W |
The maximum continuous drain current is 5.5 A.