This document describes the FDC6312P dual P-channel 1.8V specified MOSFET produced by Fairchild Semiconductor. The product is manufactured using Fairchild Semiconductor's advanced PowerTrench process, which is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance.
The document describes the Fairchild Semiconductor FDC6312P, a dual P-Channel MOSFET specified for 1.8V operation. It utilizes the PowerTrench process to minimize on-state resistance while maintaining low gate charge for superior switching performance. The device is available in a SuperSOT-6 package, which offers a small footprint and low profile.
The datasheet details the absolute maximum ratings, electrical characteristics, and typical characteristics of the device. Key parameters include a drain-source voltage of -20V, a continuous drain current of -2.3A, and a gate threshold voltage ranging from -0.4V to -1.5V. It also includes information on thermal characteristics, package marking, and ordering information.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Continuous Drain Current | -2.3 A |
| Power Dissipation | 0.96 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | SuperSOT-6 |
The maximum continuous drain current is -2.3 A.
The operating junction temperature range is -55 to +150 °C.
The SuperSOT™-6 package has a low profile that is 1mm thick.