50N50/55N50 is a N-channel MOSFET device from IXYS. It has a maximum voltage of 500V, a maximum current of 50A and a conduction resistance of 100mΩ.
This datasheet presents the key specifications of the IXYS IXFX 50N50 power MOSFET, including maximum voltage, current ratings, thermal limits, and mechanical dimensions. It also lists typical features such as the PLUS 247™ package and low inductance design.
Graphs illustrate output characteristics, gate charge, capacitance, and safe operating area across temperature ranges, while tables give detailed test conditions and characteristic values for designers.
| Drain‑Source Voltage (V_DSS) max | 500 V |
|---|---|
| Continuous Drain Current (I_D) at 25°C | 50 A |
| Pulsed Drain Current (I_D) at 25°C | 200 A |
| Operating Temperature Range | -55 °C to +150 °C |
| Package Weight | 6 g |
| Mounting Torque | 1.13840 N·m |
| Package Type | PLUS 247™ clip or spring mounting |
The device is rated for a maximum V_DSS of 500 V.
It can conduct up to 50 A continuously at 25 °C.
The MOSFET operates from –55 °C up to +150 °C.
It uses the PLUS 247™ package designed for clip or spring mounting.