Key facts
- Brand
- Hitachi
- Model
- 2SJ318
- Industry
- Industrial
- Documents
- 4
- Languages
- EN
- Last added
- 2012-06-07
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Hitachi 2SJ318 Series Silicon P-Channel MOS FET Datasheet
This document provides technical specifications for the Hitachi 2SJ318(L) and 2SJ318(S), which are Silicon P-Channel MOS Field Effect Transistors (MOSFETs). These devices are designed for high-speed power switching applications, such as switching regulators and DC-DC converters. Key features include low on-resistance, high speed switching, and the ability to be driven from a 5V source using a gate drive device.
Read onlineHitachi 2SJ318 specifications
| Drain to source voltage | -20 V |
|---|---|
| Gate to source voltage | +20 V |
| Channel dissipation | 20 W |
| Channel temperature | 150 °C |
| Storage temperature | -55 to +150 °C |
| Gate to source cutoff voltage | 1.0 — 2.25 V |
| Static drain to source on state resistance | 0.09 0.13 Q |
Source: Hitachi 2SJ318 Series Silicon P-Channel MOS FET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for this MOS FET?
The device supports a maximum drain current of 5 A under specified test conditions.
From: Hitachi 2SJ318 Series Silicon P-Channel MOS FET Datasheet
What is the maximum power dissipation rating at room temperature?
The channel can dissipate up to 20 W when the ambient temperature is 25°C.
From: Hitachi 2SJ318 Series Silicon P-Channel MOS FET Datasheet
What is the maximum continuous drain current for this device?
The absolute maximum rating for drain current is -5 A.
From: Hitachi 2SJ318(L)/2SJ318(S) Silicon P-Channel MOS FET Datasheet
Can this MOS FET be used in medical applications like life support systems?
No, the products are not authorized for use in medical applications without written consent.
From: Hitachi 2SJ318(L)/2SJ318(S) Silicon P-Channel MOS FET Datasheet
What is the maximum channel temperature for this MOS FET?
The absolute maximum channel temperature rating is 150 °C.
From: Hitachi 2SJ318(L) 2SJ318(S) Silicon P-Channel MOS FET Datasheet
Can a 4V gate drive device be used with this component?
Yes, the device can be driven from a 5 V source even though it is a 4V gate drive device.
From: Hitachi 2SJ318(L) 2SJ318(S) Silicon P-Channel MOS FET Datasheet