Key facts
- Brand
- Hitachi
- Model
- 2SC1213
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
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Hitachi 2SC1213/2SC1213A Silicon NPN Transistor Datasheet
This document provides technical specifications for the Hitachi 2SC1213 and 2SC1213A, which are Silicon NPN Epitaxial transistors. The devices are designed for low frequency amplifier applications and can be used as a complementary pair with the 2SA673 series.
Read onlineAll Hitachi 2SC1213 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the primary application for these transistors?
They are intended for use as low frequency amplifiers.
From: Hitachi 2SC1213/2SC1213A Silicon NPN Transistor Datasheet
Can this transistor be used with a complementary pair?
Yes, it can form a complementary pair with the 2SA673 and 2SA673A models.
From: Hitachi 2SC1213/2SC1213A Silicon NPN Transistor Datasheet
What is the maximum collector current for this transistor?
The maximum collector current is rated at 500 mA.
From: Hitachi 2SC1213/2SC1213A Silicon NPN Transistor Datasheet
What are the absolute maximum ratings for collector to emitter voltage?
The maximum collector to emitter voltage is 35 V for the standard model and 50 V for the A variant.
From: Hitachi 2SC1213/2SC1213A Silicon NPN Transistor Datasheet