Key facts
- Brand
- Hitachi
- Model
- 2SA1190
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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Hitachi 2SA1190 and 2SA1191 Datasheet
The 2SA1190 and 2SA1191 are silicon PNP epitaxial transistors intended for low‑frequency, low‑noise amplifier applications and can be used as a complementary pair with the 2SC2855/2SC2856 series. The document lists their pinout (Emitter, Collector, Base) and outlines key electrical parameters.
Typical specifications include collector‑to‑base and collector‑to‑emitter breakdown voltages, maximum collector current, power dissipation, junction temperature limits, gain‑bandwidth product, and noise figures. Graphs of typical output and transfer characteristics are provided, along with notes on usage and medical‑application restrictions.
Hitachi 2SA1190 specifications
| Collector‑to‑base voltage (Vcbo) | -90 V (2SA1190) / -120 V (2SA1191) |
|---|---|
| Emitter‑to‑base voltage (Vebo) | -5 V |
| Maximum collector current (Ic) | 100 mA |
| Maximum power dissipation (Pd) | 400 mW |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Gain‑bandwidth product (fT) | 130 MHz |
| Noise figure (NF) | 0.15 dB |
All Hitachi 2SA1190 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current for the 2SA1190/2SA1191?
The maximum collector current is 100 mA.
What are the collector‑to‑base voltage limits?
The collector‑to‑base voltage is –90 V for the 2SA1190 and –120 V for the 2SA1191.
What applications are the 2SA1190 and 2SA1191 suited for?
They are intended for low‑frequency low‑noise amplifiers and can be used as a complementary pair with 2SC2855 and 2SC2856.
What are the absolute maximum collector‑to‑base voltage ratings?
The 2SA1190 is rated for -90 V and the 2SA1191 for -120 V.