Hitachi 2SA1029 Manuals

2SA1029 and 2SA1030 are silicon PNP epitaxial transistors suitable for low frequency amplifiers. They are complementary pairs with 2SC458 and 2SC2308. The features and characteristics include: collector to base voltage ranging from -30V to -55V, collector to emitter voltage ranging from -30V to -50V, emitter to base voltage of -5V, collector current of -100mA, emitter current of 100mA, collector power dissipation of 300mW, and maximum operating temperature of 150°C.