Key facts
- Brand
- Hitachi
- Model
- 2SA1029
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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Hitachi 2SA1029 and 2SA1030 Datasheet
The 2SA1029 and 2SA1030 are silicon PNP epitaxial transistors offered by Hitachi. They are intended for low‑frequency amplifier applications and can be used as complementary pairs with devices such as the 2SC458 and 2SC2308.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, and the TO‑92 package outline. It also includes cautions regarding usage limits, non‑radiation‑resistant design, and contact information for Hitachi semiconductor support.
Hitachi 2SA1029 specifications
| Collector‑to‑base voltage (V_CBO) max | -30 V (2SA1029) / -55 V (2SA1030) |
|---|---|
| Collector‑to‑emitter voltage (V_CEO) max | -30 V (2SA1029) / -50 V (2SA1030) |
| Collector current (I_C) max | 100 mA |
| Power dissipation (P_D) max | 300 mW |
| Maximum junction temperature (Tj) | 150 °C |
| Package type | TO‑92 |
All Hitachi 2SA1029 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What applications are the 2SA1029 and 2SA1030 transistors suitable for?
They are intended for low‑frequency amplifier circuits and can be used as complementary pairs with 2SC458 and 2SC2308.
What is the maximum collector‑to‑base voltage for the 2SA1030?
The maximum collector‑to‑base voltage for the 2SA1030 is 55 V.
What applications are the 2SA1029 and 2SA1030 intended for?
They are suited for low‑frequency amplifier circuits and can be used as complementary pairs with 2SC458 and 2SC2308.
Are there any special cautions mentioned for using these transistors?
Yes, Hitachi notes that the product is not radiation‑resistant, that it may be subject to change without notice, and that users should stay within the guaranteed rating ranges.