Key facts
- Brand
- Hitachi
- Model
- BB601M
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
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Hitachi BB601M MOS FET UHF RF Amplifier Manual
Datasheet 13 pages · 82 KB · EN
The BB601M is a MOS FET integrated circuit with a built‑in biasing circuit designed for UHF RF amplification. It offers high gain, low noise, and ESD protection, and is supplied in a mini‑mold MPAK‑4R package.
The document lists absolute maximum ratings, electrical characteristics, and typical performance graphs such as power gain versus gate resistance and noise figure versus gate resistance. Package dimensions and cautions for proper use are also included.
Hitachi BB601M specifications
| Drain to source voltage (VDS) max | 6 V |
|---|---|
| Gate to source cutoff voltage (VGS(off)) typical | 0.5 V |
| Drain current (ID) max | 20 mA |
| Channel power dissipation (Pch) max | 150 mW |
| Power gain (PG) typical at 900 MHz | 21.5 dB |
| Noise figure (NF) typical at 900 MHz | 1.85 dB |
All Hitachi BB601M documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain current for the BB601M?
The maximum drain current is 20 mA.
What is the typical power gain of the BB601M at 900 MHz?
The typical power gain is 21.5 dB at 900 MHz.
What is the typical power gain of the BB601M at 900 MHz?
The typical power gain is 21.5 dB at 900 MHz.
What is the typical noise figure of the BB601M at 900 MHz?
The typical noise figure is 1.85 dB at 900 MHz.