2SJ318(L), 2SJ318(S) is a silicon P-channel MOS FET with low on-resistance, high switching speed and low drive current, suitable for switching regulator, DC-DC converter and other applications.
This document provides technical specifications and application information for the Hitachi 2SJ318(L) and 2SJ318(S), which are Silicon P-Channel MOS FETs designed for high-speed power switching. Key features include low on-resistance, high speed switching, and suitability for use in switching regulators and DC-DC converters.
| Drain to source voltage (Voss) | -20 V |
|---|---|
| Gate to source voltage (Voss) | +20 V |
| Drain current | -5 A |
| Channel dissipation (Poh) | 20 W |
| Channel temperature (Tch) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
| Drain to source breakdown voltage (Veerss) | 20 V |
| Gate to source cutoff voltage (Vassin) | -1.0 to 2.25 V |
| Static drain to source on state resistance (Posion) | 0.09 to 0.13 Q |
| Input capacitance (Ciss) | 580 pF |
The absolute maximum channel temperature rating is 150 °C.
Yes, the device can be driven from a 5 V source even though it is a 4V gate drive device.
The drain to source voltage rating is -20 V.