Key facts
- Brand
- Hitachi
- Model
- 2SA1193
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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Hitachi 2SA1193(K) Datasheet
The 2SA1193(K) is a silicon PNP Darlington transistor intended for high‑gain amplifier applications. It features a high current gain and is packaged for use in a variety of circuit designs.
The document lists absolute maximum ratings, electrical characteristics, and typical curves such as collector‑to‑emitter saturation voltage and switching time versus collector current. Legal and usage notes, including restrictions on medical applications, are also included.
Hitachi 2SA1193 specifications
| Collector‑to‑base voltage (V_CBO) | -60 V |
|---|---|
| Collector‑to‑emitter voltage (V_CEO) | -60 V |
| Emitter‑to‑base voltage (V_EBO) | 7 V |
| Collector current (I_C) | -0.5 A |
| Collector peak current (I_C peak) | -1.0 A |
| Collector power dissipation (P_C) | 0.9 W |
| Junction temperature (T_J) | 150 °C |
| Storage temperature (T_stg) | -55 to +150 °C |
| Turn‑on time (t_on) | 0.3 µs |
| Turn‑off time (t_off) | 0.9 µs |
| Base‑to‑emitter saturation voltage (V_BE(sat)) | -2.0 V |
Source: Hitachi 2SA1193(K) Datasheet
All Hitachi 2SA1193 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑to‑base voltage for the 2SA1193(K)?
The maximum collector‑to‑base voltage is –60 V.
What is the turn‑on time of the 2SA1193(K) transistor?
The turn‑on time is specified as 0.3 µs.
What is the maximum collector‑to‑emitter voltage rating?
The device is rated for a collector‑to‑emitter voltage of –60 V.
From: Hitachi 2SA1193(K) Silicon PNP Darlington Transistor Datasheet
What is the typical DC current gain (hFE) of the 2SA1193(K)?
The typical DC current transfer ratio is 2000.
From: Hitachi 2SA1193(K) Silicon PNP Darlington Transistor Datasheet