Key facts
- Brand
- Hitachi
- Model
- 2SC1213A
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-07
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Hitachi 2SC1213A(K) Silicon NPN Transistor Datasheet
This document is a technical datasheet for the Hitachi 2SC1213A(K), a Silicon NPN Epitaxial transistor packaged in TO-92. The device is designed for applications such as low-frequency amplifiers and medium-speed switching circuits.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings like collector current (500 mA) and power dissipation (400 mW). It also details typical performance curves for output characteristics, transfer characteristics, and switching times versus collector current.
Hitachi 2SC1213A specifications
| Package Type | TO-92 (1) |
|---|---|
| Collector Current | 500 mA |
| Collector Power Dissipation | 400 mW |
| Junction Temperature | 150 °C |
| Collector to Base Breakdown Voltage | 50 V |
| Gain Bandwidth Product | 120 MHz |
Source: Hitachi 2SC1213A(K) Silicon NPN Transistor Datasheet
All Hitachi 2SC1213A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for this transistor?
The device is suitable for low frequency amplifier and medium speed switching applications.
Is the 2SC1213A(K) radiation resistant?
No, this product is not designed to be radiation resistant.
What is the primary application for these transistors?
They are intended for use as low frequency amplifiers.
From: Hitachi 2SC1213/2SC1213A Silicon NPN Transistor Datasheet
Can this transistor be used with a complementary pair?
Yes, it can form a complementary pair with the 2SA673 and 2SA673A models.
From: Hitachi 2SC1213/2SC1213A Silicon NPN Transistor Datasheet
What is the maximum collector current for this transistor?
The maximum collector current is rated at 500 mA.
From: Hitachi 2SC1213/2SC1213A Silicon NPN Transistor Datasheet
What are the absolute maximum ratings for collector to emitter voltage?
The maximum collector to emitter voltage is 35 V for the standard model and 50 V for the A variant.
From: Hitachi 2SC1213/2SC1213A Silicon NPN Transistor Datasheet