Key facts
- Brand
- Hitachi
- Model
- 2SA1194
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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Hitachi 2SA1194(K) Datasheet
The 2SA1194(K) is a silicon PNP epitaxial transistor intended for high‑gain amplifier applications. The document lists its absolute maximum ratings, typical electrical parameters, and switching characteristics to aid designers in selecting and using the device.
Key specifications include collector‑to‑base voltage of –60 V, collector‑to‑emitter voltage of –60 V, a typical DC current gain of 1000, and turn‑on/off times of 0.7 µs and 0.8 µs respectively. Legal notices and usage restrictions, such as the prohibition of medical applications without explicit approval, are also included.
Hitachi 2SA1194 specifications
| Collector‑to‑base voltage (Vcbo) | -60 V |
|---|---|
| Collector‑to‑emitter voltage (Vceo) | -60 V |
| Emitter‑to‑base voltage (Vebo) | 7 V |
| Collector current (Ic) | -1 A |
| Collector peak current (Icp) | -2 A |
| Collector power dissipation (Pc) | 1 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 °C to +150 °C |
| Turn‑on time (ton) | 0.7 µs |
| Turn‑off time (toff) | 0.8 µs |
| DC current gain (hFE) | 1000 (typical) |
| Collector‑to‑emitter saturation voltage (Vcesat) | -2.0 V |
Source: Hitachi 2SA1194(K) Datasheet
All Hitachi 2SA1194 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑to‑base voltage for the 2SA1194(K)?
The maximum collector‑to‑base voltage is –60 V.
What is the typical DC current gain (hFE) of the 2SA1194(K)?
The typical DC current gain is 1000.
What is the maximum collector current rating for the 2SA1194(K)?
The maximum collector current is -1 A.
What storage temperature range is recommended for the 2SA1194(K)?
The device should be stored between –55 °C and +150 °C.