Key facts
- Brand
- Hitachi
- Model
- 2SA1085
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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Hitachi 2SA1083/2SA1084/2SA1085 Datasheet
This document provides the specifications and characteristic curves for Hitachi silicon PNP epitaxial transistors 2SA1083, 2SA1084, and 2SA1085. The transistors are intended for low‑frequency low‑noise amplifier applications and can be used as complementary pairs with 2SC2545, 2SC2546, and 2SC2547.
Key data include absolute maximum ratings such as collector‑to‑base voltage, collector‑to‑emitter voltage, and collector current, as well as detailed electrical parameters like gain‑bandwidth product, noise voltage, and output capacitance. Legal notices and usage restrictions, especially for medical applications, are also included.
Hitachi 2SA1085 specifications
| Collector‑to‑base voltage (Vcbo) | -60 V (2SA1083) |
|---|---|
| Collector‑to‑emitter voltage (Vceo) | -60 V (2SA1083) |
| Collector current (Ic) | 100 mA |
| Junction temperature (Tj) | 150 °C |
| Gain‑bandwidth product (fT) | 9 MHz |
All Hitachi 2SA1085 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What complementary NPN transistors are recommended for use with the 2SA1083/1084/1085?
They are intended to be used as a complementary pair with 2SC2545, 2SC2546 and 2SC2547.
What is the maximum collector current for these transistors?
The maximum collector current is 100 mA.
What is the maximum collector‑to‑base voltage for the 2SA1084?
The 2SA1084 can withstand up to –90 V between collector and base.
What is the recommended storage temperature range for these transistors?
They can be stored from –55 °C up to +150 °C.