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This document provides technical specifications for the Hitachi 2SJ318(L) and 2SJ318(S), which are Silicon P-Channel MOS Field Effect Transistors (MOSFETs). These devices are designed for high-speed power switching applications, such as switching regulators and DC-DC converters. Key features include low on-resistance, high speed switching, and the ability to be driven from a 5V source using a gate drive device.
| Drain to source voltage | -20 V |
|---|---|
| Gate to source voltage | +20 V |
| Channel dissipation | 20 W |
| Channel temperature | 150 °C |
| Storage temperature | -55 to +150 °C |
| Gate to source cutoff voltage | 1.0 — 2.25 V |
| Static drain to source on state resistance | 0.09 0.13 Q |
The device supports a maximum drain current of 5 A under specified test conditions.
The channel can dissipate up to 20 W when the ambient temperature is 25°C.
The device must not exceed -20 V between the drain and source or +20 V between the gate and source.