2SJ318L is a P-channel MOSFET from NXP that is suitable for high-voltage switching applications. It features low on-resistance, high switching speed, and low drive current.
This document provides technical specifications and performance characteristics for the Hitachi 2SJ318(L) and 2SJ318(S) Silicon P-Channel MOS FETs. These devices are designed for high-speed power switching applications, such as switching regulators and DC-DC converters.
| Drain to source voltage | -20 Vv |
|---|---|
| Gate to source voltage | +/- 20 Vv |
| Drain current | -5 A |
| Channel dissipation | 20 Ww |
| Channel temperature | 150 °C |
| Storage temperature | -55 to +150 °C |
The absolute maximum rating for drain current is -5 A.
No, the products are not authorized for use in medical applications without written consent.
The absolute maximum channel temperature (Tch) is 150 °C.