Key facts
- Brand
- Hitachi
- Model
- 2SA1188
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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Hitachi 2SA1188 and 2SA1189 Silicon PNP Transistor Datasheet
The 2SA1188 and 2SA1189 are silicon PNP epitaxial transistors offered by Hitachi. They are intended for low‑frequency amplifier applications and can be used as complementary pairs with the 2SC2853 and 2SC2854 transistors.
The document lists absolute maximum ratings, electrical characteristics such as collector‑base and collector‑emitter breakdown voltages, current limits, power dissipation, and gain bandwidth. It also includes a maximum collector dissipation curve and legal usage notes.
Hitachi 2SA1188 specifications
| Collector to base voltage (VCBO) | -90 V (2SA1188), -120 V (2SA1189) |
|---|---|
| Collector to emitter voltage (VCEO) | -90 V (2SA1188), -120 V (2SA1189) |
| Emitter to base voltage (VEBO) | -5 V (both devices) |
| Collector current (IC) | 100 mA (both devices) |
| Junction temperature (Tj) | 150 °C |
| Maximum collector power dissipation (PC) | 400 mW |
Source: Hitachi 2SA1188/2SA1189 Silicon PNP Epitaxial Transistor Datasheet
All Hitachi 2SA1188 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What applications are the 2SA1188 and 2SA1189 suitable for?
They are intended for low‑frequency amplifiers and can be used as complementary pairs with 2SC2853 and 2SC2854.
From: Hitachi 2SA1188 and 2SA1189 Silicon PNP Transistor Datasheet
What is the storage temperature range for these transistors?
The storage temperature range is –55 °C to +150 °C.
From: Hitachi 2SA1188 and 2SA1189 Silicon PNP Transistor Datasheet
What are the absolute maximum collector‑to‑base voltage ratings for the 2SA1188 and 2SA1189?
The 2SA1188 is rated for –90 V and the 2SA1189 for –120 V collector‑to‑base voltage.
From: Hitachi 2SA1188/2SA1189 Silicon PNP Epitaxial Transistor Datasheet
Are these transistors designed to be radiation resistant?
No, the product is not designed to be radiation resistant.
From: Hitachi 2SA1188/2SA1189 Silicon PNP Epitaxial Transistor Datasheet