Key facts
- Brand
- Hitachi
- Model
- 2SJ130
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
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Hitachi 2SJ130(L) 2SJ130(S) Silicon P-Channel MOS FET Datasheet
This document provides technical specifications for the Hitachi 2SJ130(L) and 2SJ130(S) Silicon P-Channel MOS FETs. These devices are designed for high-speed power switching applications such as switching regulators, DC-DC converters, and ultrasonic power oscillators.
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum channel temperature for this MOS FET?
The absolute maximum channel temperature is rated at 150 °C.
From: Hitachi 2SJ130(L) 2SJ130(S) Silicon P-Channel MOS FET Datasheet
What is the maximum drain current rating?
The device has a maximum drain current of -1 A.
From: Hitachi 2SJ130(L) 2SJ130(S) Silicon P-Channel MOS FET Datasheet
What is the maximum channel temperature for this MOS FET?
The absolute maximum rating for the channel temperature is 150 °C.
From: Hitachi 2SJ130(L)/2SJ130(S) Silicon P-Channel MOS FET Datasheet
What is the minimum gate to source cutoff voltage?
The minimum gate to source cutoff voltage is -2.0 V.
From: Hitachi 2SJ130(L)/2SJ130(S) Silicon P-Channel MOS FET Datasheet