FQPF13N06L is a 60V logic N-channel MOSFET produced by Fairchild Semiconductor. It features low on-state resistance, superior switching performance and high energy pulse tolerance, and is suitable for low-voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products.
The FQPF13NO06L is a 60 V N‑Channel enhancement mode MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and power management in portable, battery‑operated products.
Key features include a continuous drain current of 10 A, low gate charge (typical 4.8 nC), low output capacitance (typical 17 pF), fast switching, 100 % avalanche testing, and a maximum junction temperature of 175 °C. The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and test circuit diagrams.
| Drain‑Source Voltage (V_DSS) | 60 V |
|---|---|
| Gate‑Source Voltage (V_GS) | ±20 V |
| On‑Resistance (R_DS(on)) | 0.119 Ω @ V_GS=10 V |
| Operating Temperature Range | -55 °C to +175 °C |
The device is rated for a maximum drain‑source voltage of 60 V.
The MOSFET is rated for a maximum junction temperature of 175 °C.