This document describes the FQPF13N06 N-Channel MOSFET product produced by Fairchild Semiconductor Corporation. The product uses advanced DMOS technology, with low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications such as DC/DC converters and high efficiency switching control in portable and battery operated products.
The FQPF13N06 is a 60 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, low gate charge, fast switching and high avalanche capability, making it suitable for low‑voltage DC/DC converters and portable power‑management applications.
The document provides absolute maximum ratings, electrical and thermal characteristics, typical performance curves, test circuit diagrams, and package dimensions for the TO‑220F package. It also includes trademark information, legal disclaimer, and product status definitions.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 9.4 A |
| Continuous Drain Current (ID) at 100 °C | 6.6 A |
| Pulsed Drain Current (ID) (Note 1) | 37.6 A |
| Gate‑Source Voltage (VGS) | ±25 V |
| On‑Resistance (RDS(on)) typical | 0.135 Ω @ VGS=10 V |
| Gate Charge (Qg) typical | 5.8 nC |
| Reverse Transfer Capacitance (Crss) typical | 15 pF |
| Maximum Junction Temperature (TJ) | 175 °C |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of 60 V.
It can handle 9.4 A continuously at 25 °C and 6.6 A continuously at 100 °C.
The typical gate charge is 5.8 nC.
The MOSFET is supplied in a TO‑220F package.