This document describes the features and characteristics of the FQPF13N06L 60V logic N-channel MOSFET product. This product is produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and can withstand high energy pulses. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The FQPF13N06L is a 60 V N‑Channel enhancement mode MOSFET built with Fairchild's planar stripe DMOS technology. It offers low on‑resistance, low gate charge, and fast switching, making it suitable for low‑voltage automotive, DC‑DC converters, and portable power management.
The document provides absolute maximum ratings, thermal characteristics, electrical parameters, switching behavior, and package dimensions for designers and engineers.
| Drain‑Source Voltage (V_DSS) | 60 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 10 A |
| Pulsed Drain Current (I_D(pulse)) | 40 A |
| Gate‑Source Voltage (V_GS) | 20 V |
| Power Dissipation (P_D) @ 25 °C | 24 W |
| On‑Resistance (R_DS(on)) @ V_GS=10 V | 0.119 Ω |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.6 °C·W |
The device is rated for a maximum drain‑source voltage of 60 V.
The continuous drain current rating is 10 A at 25 °C.
The typical gate charge is 4.8 nC.
The device can operate up to a maximum junction temperature of 175 °C.