FQPF13N06 60V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
The FQPF13N06L is an N‑channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed to minimize on‑state resistance, provide fast switching, and tolerate high‑energy avalanche events, making it appropriate for low‑voltage automotive, DC‑DC converters, and portable power‑management circuits.
Key electrical parameters include a 60 V drain‑source rating, 10 A continuous drain current at 25 °C (7 A at 100 °C), 40 A pulsed current capability, and a low gate charge of about 4.8 nC. The device features a typical RDS(on) of 0.11 Ω at VGS=5 V and includes robust thermal characteristics for reliable operation.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (25 °C) | 10 A |
| Continuous Drain Current (100 °C) | 7 A |
| Pulsed Drain Current | 40 A |
| Gate‑Source Voltage (VGS) | +20 V |
| Power Dissipation (25 °C) | 24 W |
| Junction‑to‑Case Thermal Resistance | 0.6 °C/W (typ) |
| Junction‑to‑Ambient Thermal Resistance | 62.5 °C/W (typ) |
| Operating Temperature Range | -55 °C to +175 °C |
The device can carry 10 A continuously at 25 °C and 7 A continuously at 100 °C.
RDS(on) is about 0.110 Ω under those conditions.
The total gate charge is approximately 48 nC at VGS = 48 V and ID = 13.6 A.
The drain‑source breakdown voltage is specified as 60 V.